Features: · High breakdown voltage· Low collector-emitter saturation voltage· Complementary type: SMBTA06M (NPN)DescriptionThe features of SMBTA56M: Parameter Symbol Value Unit Collector-emitter voltage VCEO 80 V Collector-base voltage VCBO 80 Emitter...
SMBTA56M: Features: · High breakdown voltage· Low collector-emitter saturation voltage· Complementary type: SMBTA06M (NPN)DescriptionThe features of SMBTA56M: Parameter Symbol Value Uni...
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Features: · High DC current gain: 0.1 mA to 500 mA· Low collector-emitter saturation voltage· Comp...
· High breakdown voltage
· Low collector-emitter saturation voltage
· Complementary type: SMBTA06M (NPN)
The features of SMBTA56M:
|
Parameter |
Symbol |
Value |
Unit |
| Collector-emitter voltage |
VCEO |
80 |
V |
| Collector-base voltage |
VCBO |
80 | |
| Emitter-base voltage |
VEBO |
4 | |
| collector current |
IC |
500 |
mA |
| Peak collector current |
ICM |
1 |
A |
| Base current |
IB |
100 |
mA |
| Peak base current |
IBM |
200 | |
| Total power dissipation, TS 95 |
Ptot |
1 |
W |
| Junction temperature |
Tj |
150 |
|
| Storage temperature |
Tstg |
-65 .. 150 |