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Features: · High current gain: 0.1 mA to 100 mA· Low collector-emitter saturation voltageSpecifications Parameter Symbol Values Unit Collector-emitter voltage VCE0 25 V Collector-base voltage VCB0 25 V Emitter-base voltage VEB0 4 V Col...

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SMBT 4126: Features: · High current gain: 0.1 mA to 100 mA· Low collector-emitter saturation voltageSpecifications Parameter Symbol Values Unit Collector-emitter voltage VCE0 2...

SMBT 4126 Data Sheet

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Part Number:: SMBT 4126
Supply Ability:: 5000

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Upload time: 2025/12/25

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US $.04 - .3 / Piece

Transistors Bipolar (BJT) AF GP BJT NPN 40V 0.6A

Product Details

Description

Features:

· High current gain: 0.1 mA to 100 mA
· Low collector-emitter saturation voltage

Specifications

Parameter	Symbol	Values	Unit
Parameter	Symbol	Values
Collector-emitter voltage	V_CE0	25	V
Collector-base voltage	V_CB0	25	V
Emitter-base voltage	V_EB0	4	V
Collector current	I_C	200	mA
Total power dissipation, T_S =71 °C	P_tot	330	mW
Junction temperature	T_j	150	°C
Storage temperature range	T_stg	65 . + 150	°C
Junction - ambient2)	R_{th JA}	310	K/W
Junction - soldering point	_{^Rth JS}	240	K/W

1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm ´ 40 mm ´ 1.5 mm/6 cm2 Cu.

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SMBT 4126

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