Features: • Faster Switching• Lower Leakage• TO267 Hermetic PackageSpecifications VDSS Drain Source Voltage 1000 V ID Continuous Drain Current 17.3 A IDM Pulsed Drain Current 1 69.2 A VGS Gate Source Voltage ±30 V V...
SML100W18: Features: • Faster Switching• Lower Leakage• TO267 Hermetic PackageSpecifications VDSS Drain Source Voltage 1000 V ID Continuous Drain Current 17.3 A...
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|
VDSS |
Drain Source Voltage |
1000 |
V |
|
ID |
Continuous Drain Current |
17.3 |
A |
|
IDM |
Pulsed Drain Current 1 |
69.2 |
A |
|
VGS |
Gate Source Voltage |
±30 |
V |
|
VGSM |
Gate Source Voltage Transient |
±40 |
V |
|
PD |
Total Power Dissipation @ Tcase = 25°C |
400 |
W |
|
PD |
Derate Linearly |
3.2 |
W/°C |
|
TJ , TSTG |
Operating and Storage Junction Temperature Range |
55 to 150 |
°C |
|
TL |
Lead Temperature : 0.063" from Case for 10 Sec. |
300 |
°C |
|
IAR |
Avalanche Current1 (Repetitive and Non-Repetitive) |
17.3 |
A |
|
EAR |
Repetitive Avalanche Energy 1 |
50 |
mJ |
|
EAS |
Single Pulse Avalanche Energy 2 |
2500 |
mJ |