SML30J130 Selling Leads, Price trend, SML30J130 DataSheet download, circuit diagram from SeekIC.com

Features: • Faster Switching• Lower Leakage• 100% Avalanche Tested• Popular SOT227 PackageSpecifications VDSS Drain Source Voltage 300 V ID Continuous Drain Current 130 A IDM Pulsed Drain Current 1 520 A VGS Gate Source ...

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SeekIC No. : 004495201 Detail

SML30J130: Features: • Faster Switching• Lower Leakage• 100% Avalanche Tested• Popular SOT227 PackageSpecifications VDSS Drain Source Voltage 300 V ID Continuou...

SML30J130 Data Sheet

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Part Number:: SML30J130
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2025/12/24

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Product Details

Description

Features:

• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular SOT227 Package

Specifications

V_DSS	Drain Source Voltage	300	V
I_D	Continuous Drain Current	130	A
I_DM	Pulsed Drain Current ¹	520	A
V_GS	Gate Source Voltage	±30	V
V_GSM	Gate Source Voltage Transient	±40	V
P_D	Total Power Dissipation @ Tc_ase = 25°C	700	W
P_D	Derate Linearly	5.6	W/°C
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to 150	°C
T_L	Lead Temperature : 0.063" from Case for 10 Sec.	300	°C
I_AR	Avalanche Current1 (Repetitive and Non-Repetitive)	130	A
E_AR	Repetitive Avalanche Energy ¹	50	mJ
E_AS	Single Pulse Avalanche Energy ²	3600	mJ

Description

StarMOS SML30J130 is a new generation of high voltage NChannel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS SML30J130 also achieves faster switching speeds through optimised gate layout.

SML30J130

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