Specifications VDSS Drain Source Voltage 55 V ID Continuous Drain Current 21 A IDM Pulsed Drain Current1 84 A VGS Gate Source Voltage ±30 V VGSM Gate Source Voltage Transient ±40 PD Total Power Dissipation @ Tcase = 25°C 235 W Derate Linearly 1.88 W/°C...
SML50A21: Specifications VDSS Drain Source Voltage 55 V ID Continuous Drain Current 21 A IDM Pulsed Drain Current1 84 A VGS Gate Source Voltage ±30 V VGSM Gate Source Voltage...
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Features: High Voltage (800V)High Current (25A)Ultra Fast (45nS)Common CathodeTO254 Hermetic Packa...
Features: High Voltage (800V)High Current (25A)Ultra Fast (45nS)Common CathodeTO254 Hermetic Packa...
| VDSS | Drain Source Voltage | 55 | V |
| ID | Continuous Drain Current | 21 | A |
| IDM | Pulsed Drain Current1 | 84 | A |
| VGS | Gate Source Voltage | ±30 | V |
| VGSM | Gate Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ Tcase = 25°C | 235 | W |
| Derate Linearly | 1.88 | W/°C | |
| TJ , TSTG | Operating and Storage Junction Temperature Range | 55 to 150 | |
| TL | Lead Temperature : 0.063" from Case for 10 Sec. | 300 | |
| IAR | Avalanche Current1 (Repetitive and Non-Repetitive) | 21 | A |
| EAR | Repetitive Avalanche Energy1 | 30 | mJ |
| EAS | Single Pulse Avalanche Energy2 |
1300 |