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SML50B30

Features: •Faster Switching•Lower Leakage•100% Avalanche Tested•Popular TO247 PackageSpecifications VDSS Drain Source Voltage 500 V ID Continuous Drain Current 30 A IDM Pulsed Drain Current 120 A VGS Gate Source Voltage ±20 V VGSM Gate Sour...

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SeekIC No. : 004495257 Detail

SML50B30: Features: •Faster Switching•Lower Leakage•100% Avalanche Tested•Popular TO247 PackageSpecifications VDSS Drain Source Voltage 500 V ID Continuous Drain Current ...

SML50B30 Data Sheet

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Part Number:
SML50B30
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

•Faster Switching
•Lower Leakage
•100% Avalanche Tested
•Popular TO247 Package


Specifications

VDSS Drain Source Voltage 500 V
ID Continuous Drain Current 30 A
IDM Pulsed Drain Current 120 A
VGS Gate Source Voltage ±20 V
VGSM Gate Source Voltage Transient ±30
PD Total Power Dissipation @ Tcase= 25°C 370 W
Derate Linearly 2.96 W/°C
TJ, TSTG Operating and Storage Junction Temperature Range 55 to 150 °C
TL Lead Temperature : 0.063" from Case for 10 Sec. 300
IAR Avalanche Current1(Repetitive and Non-Repetitive) 30 A
EAS Repetitive Avalanche Energy 30 mJ
EAS Single Pulse Avalanche Energy 1300



Description

StarMOS SML50B30 is a new generation of high voltage NChannel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS SML50B30 also achieves faster switching speeds through optimised gate layout. 




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