Specifications VDSS Drain Source Voltage 500 V ID Continuous Drain Current 50 A IDM Pulsed Drain Current 1 200 A VGS Gate Source Voltage ±20 V VGSM Gate Source Voltage Transient ±30 PD Total Power Dissipation @ Tcase= 25°C 500 W Derate Linearly 4 W/°C ...
SML50J50: Specifications VDSS Drain Source Voltage 500 V ID Continuous Drain Current 50 A IDM Pulsed Drain Current 1 200 A VGS Gate Source Voltage ±20 V VGSM Gate Source Volt...
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Features: High Voltage (800V)High Current (25A)Ultra Fast (45nS)Common CathodeTO254 Hermetic Packa...
Features: High Voltage (800V)High Current (25A)Ultra Fast (45nS)Common CathodeTO254 Hermetic Packa...
| VDSS | Drain Source Voltage | 500 | V |
| ID | Continuous Drain Current | 50 | A |
| IDM | Pulsed Drain Current 1 | 200 | A |
| VGS | Gate Source Voltage | ±20 | V |
| VGSM | Gate Source Voltage Transient | ±30 | |
| PD | Total Power Dissipation @ Tcase= 25°C | 500 | W |
| Derate Linearly | 4 | W/°C | |
| TJ TSTG | Operating and Storage Junction Temperature Range | 55 to 150 | °C |
| TL | Lead Temperature : 0.063" from Case for 10 Sec. | 300 | |
| IAR | Avalanche Current1 (Repetitive and Non-Repetitive) | 30 | A |
| EAR | Repetitive Avalanche Energy 1 | 30 | mJ |
| EAS | Single Pulse Avalanche Energy 2 | 1300 |