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SML50S26

Features: • Faster Switching• Lower Leakage• 100% Avalanche Tested• Surface Mount D3PAK PackageSpecifications VDSS Drain Source Voltage 500 V ID Continuous Drain Current 26 A IDM Pulsed Drain Current 1 104 A VGS Gate Source Volt...

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SeekIC No. : 004495263 Detail

SML50S26: Features: • Faster Switching• Lower Leakage• 100% Avalanche Tested• Surface Mount D3PAK PackageSpecifications VDSS Drain Source Voltage 500 V ID Continuo...

SML50S26 Data Sheet

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Part Number:
SML50S26
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Surface Mount D3PAK Package


Specifications

VDSS
 Drain Source Voltage
500
V
ID
 Continuous Drain Current
26
A
IDM
 Pulsed Drain Current 1
104
A
VGS
 Gate Source Voltage
±20
V
VGSM
 Gate Source Voltage Transient
±30
PD
 Total Power Dissipation @ Tcase = 25°C
300
W
Derate Linearly
2.4
W/°C
TJ,TSTG
 Operating and Storage Junction Temperature Range
55 to 150
°C
TL
 Lead Temperature : 0.063" from Case for 10 Sec.
300
IAR
 Avalanche Current1 (Repetitive and Non-Repetitive)
26
A
EAR
 Repetitive Avalanche Energy 1
30
MJ
EAS
 Single Pulse Avalanche Energy 2
1300
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting TJ = 25°C, L = 3.85mH, RG = 25W, Peak IL = 26A


Description

StarMOS SML50S26 is a new generation of high voltage NChannel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS SML50S26 also achieves faster switching speeds through optimised gate layout.


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