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SML50T47

Features: • Faster Switching• Lower Leakage• 100% Avalanche Tested• New T247clip Package (Clipmounted TO247 Package)Specifications VDSS Drain Source Voltage 500 V ID Continuous Drain Current 47 A IDM Pulsed Drain Current 1 188 A ...

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SeekIC No. : 004495264 Detail

SML50T47: Features: • Faster Switching• Lower Leakage• 100% Avalanche Tested• New T247clip Package (Clipmounted TO247 Package)Specifications VDSS Drain Source Voltage 500...

SML50T47 Data Sheet

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Part Number:
SML50T47
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• New T247clip Package (Clipmounted TO247 Package)


Specifications

VDSS
Drain Source Voltage
500
V
ID
 Continuous Drain Current
47
A
IDM
 Pulsed Drain Current 1
188
A
VGS
 Gate Source Voltage
±30
V
VGSM
 Gate Source Voltage Transient
±40
PD
 Total Power Dissipation @ Tcase = 25°C
520
W
Derate Linearly
4.16
W/
TJ , TSTG
 Operating and Storage Junction Temperature Range
55 to 150
TL
 Lead Temperature : 0.063" from Case for 10 Sec.
300
IAR
 Avalanche Current1 (Repetitive and Non-Repetitive)
47
A
EAR
 Repetitive Avalanche Energy 1
50
mJ
EAS
 Single Pulse Avalanche Energy 2
2500

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting TJ = 25, L = 2.26mH, RG = 25 , Peak IL = 47A


Description

StarMOS SML50T47 is a new generation of high voltage NChannel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS SML50T47 also achieves faster switching speeds through optimised gate layout.




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