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SML50W40

Features: • Faster Switching• Lower Leakage• TO267 Hermetic PackageSpecifications VDSS Drain Source Voltage 500 V ID Continuous Drain Current 40 A IDM Pulsed Drain Current 1 160 A VGS Gate Source Voltage ±30 V VGSM Gate ...

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SeekIC No. : 004495265 Detail

SML50W40: Features: • Faster Switching• Lower Leakage• TO267 Hermetic PackageSpecifications VDSS Drain Source Voltage 500 V ID Continuous Drain Current 40 A ...

SML50W40 Data Sheet

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Part Number:
SML50W40
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

• Faster Switching
• Lower Leakage
• TO267 Hermetic Package


Specifications

VDSS
Drain Source Voltage
500
V
ID
 Continuous Drain Current
40
A
IDM
 Pulsed Drain Current 1
160
A
VGS
 Gate Source Voltage
±30
V
VGSM
 Gate Source Voltage Transient
±40
PD
 Total Power Dissipation @ Tcase = 25
400
W
Derate Linearly
3.2
W/
TJ , TSTG
 Operating and Storage Junction Temperature Range
55 to 150
TL
 Lead Temperature : 0.063" from Case for 10 Sec.
300
IAR
 Avalanche Current1 (Repetitive and Non-Repetitive)
40
A
EAR
 Repetitive Avalanche Energy 1
50
mJ
EAS
 Single Pulse Avalanche Energy 2
2500

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting TJ = 25, L = 3.13mH, RG = 25 , Peak IL = 40A


Description

StarMOS SML50W40 is a new generation of high voltage NChannel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS SML50W40 also achieves faster switching speeds through optimised gate layout.




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