SMV2019

The SMV2019 line of silicon hyperabrupt junction varactor diode chip are processed using established ion-implantation technology resulting in low RS wide tuning ratio devices with high Q values.These SMV2019 planar chips have a small outline size (12 * 12 mils nominal) and are fully passivated resulting in low leakage current and high reliability.These varactor chips are intended for assembly in hybird integrated circuit resonators used in VCOs and analog tuned filters.

Features of the SMV2019 are:(1)high Q for low loss resonators;(2)low leakage current;(3)high tuning ratio for wideband VCOs;(4)SPICE model parameters;(5)small footprint chip design.

The absolute maximum ratings of the SMV2019 can be summarized as:(1):the characteristic is reverse voltage,the symbol is VR,the rating is 22,the unit is V;(2):the characteristic is power dissipation at 25,the symbol is PD,the rating is 250,the unit is mW;(3):the characteristic is foreard current,the symbol is IF,the rating is 100,the unit is mA;(4):the characteristic is storage temperature,the symbol is TST,the rating is -65 to +200,the unit is ;(5):the characteristic is operating temperature,the symbol is Top,the rating is -55 to +150,the unit is .