SN54ABT620

 State-of-the-Art EPIC-II B^TM BiCMOS Design Significantly Reduces Power Dissipation
 ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
 Latch-Up Performance Exceeds 500 mA Per JESD 17
 Typical V_OLP (Output Ground Bounce) < 1 V at V_CC = 5 V, T_A = 25°C
 High-Drive Outputs (32-mA I_OH, 64-mA I_OL)
 Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline (DB), and Thin Shrink Small-Outline (PW) Packages, Ceramic Chip Carriers (FK), and Plastic (N) and Ceramic (J) DIPs

These octal bus transceivers provide for asynchronous communication between data buses. The control-function implementation SN54ABT620 allows for maximum flexibility in timing. The 'ABT620 devices provide inverted data at the outputs.

SN54ABT620 allows data transmission from the A bus to the B bus or from the B bus to the A bus, depending on the logic levels at the output-enable (OEAB and OEBA) inputs.

The output-enable inputs of SN54ABT620 can be used to disable the device so that the buses are effectively isolated. The dual-enable configuration gives the transceivers the capability of storing data by simultaneously enabling OEAB and OEBA. When both OEAB and OEBA are enabled and all other data sources to the two sets of bus lines are at high impedance, both sets of bus lines (16 total) remain at their last states. In this way, each output of SN54ABT620 reinforces its input in this configuration.

To ensure the high-impedance state during power up or power down, OEBA should be tied to V_CC through a pullup resistor; the minimum value of the resistor SN54ABT620 is determined by the current-sinking capability of the driver. OEAB should be tied to GND through a pulldown resistor; the minimum value of the resistor SN54ABT620 is determined by the current-sourcing capability of the driver.

The SN54ABT620 is characterized for operation over the full military temperature range of 55°C to 125°C. The SN74ABT620 is characterized for operation from 40°C to 85°C.