SN54BCT2828A

• State-of-the-Art BiCMOS Design Significantly Reduces I_CCZ
• ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015
• Output Ports Have Equivalent 33- Series Resistors, So No External Resistors Are Required
• 3-State Inverting Outputs Drive Bus Lines or Buffer Memory Address Registers
• Flow-Through Architecture Optimizes PCB Layout
• Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks, and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)

These 10-bit bus/MOS memory drivers of SN54BCT2828A provide a high-performance bus interface for wide data paths or buses carrying parity.

The 3-state control gate is a 2-input AND gate with active-low inputs so that if either output-enable (OE1 or OE2) input is high, all ten outputs are in the high-impedance state. The outputs of SN54BCT2828A are also in the high-impedance state during power-up and power-down conditions. The outputs of SN54BCT2828A remain in the high-impedance state while the device is powered down.

The outputs, SN54BCT2828A is designed to source or sink up to 12 mA, include 33- series resistors to reduce overshoot and undershoot.

The SN54BCT2828A is characterized for operation over the full military temperature range of 55°C to 125°C. The SN74BCT2828B is characterized for operation from 0°C to 70°C.