SN74ABT863

Features:

State-of-the-Art EPIC-B(TM) BiCMOS Design
Significantly Reduces Power Dissipation Typical V_OLP  (Output Ground Bounce) < 1 V at V_CC  = 5 V, T_A  = 25° C
High-Impedance State During Power Up and Power Down
High-Drive Outputs (32-mA I , 64-mA I )
Latch-Up Performance Exceeds 500 mA Per
ESD 17 ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline (DB) Packages, and Thin Shrink Small-Outline (PW), Ceramic Chip Carriers (FK), Plastic (NT), and Ceramic (JT) DIPs


Pinout




Specifications

Supply voltage range, V_CC   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  0.5 V to 7 V
Input voltage range, V _I(except I/O ports) (see Note 1)  . . . . . . . . . . . . . . . . .  0.5 V to 7 V
Voltage range applied to any output in the high or power-off state, V_O   . .. . 0.5 V to 5.5 V
Current into any output in the low state, I_O : . . . . . . . . ............... . . . . .  SN54ABT863 96 mA.
SN74ABT863 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . .  . . . . . . .  . . . . . . . . . 128 mA
Input clamp current, I_IK  (V< 0)  . . . . . . . . . . .  . . . . . . .  . . . . . . .  . . . .. . .  . . . . . . . . 18 mA
Output clamp current, I_OK  (V_O  < 0)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Package thermal impedance, JA (see Note 2): DB package  . . .  . . . . . . . . . . . . . . . 104°C/W
                                               DW package  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81°C/W
                                               NT package  . . . . . . . . . . . . . .  .. . . . . . . . . . . . . . . . . . . 67°C/W
                                               PW package  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120°C/W
Storage temperature range, T_stg   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  65°C to 150  °C



Description

The 'ABT863 devices are 9-bit transceivers designed for asynchronous communication between data buses. The control-function implementation allows for maximum flexibility in timing.

These  'ABT863 devices allow noninverted data transmission from the A bus to the B bus or from the B bus to the A bus, depending on the logic levels at the output-enable (OEAB and OEBA) inputs.

The outputs of  'ABT863 are in the high-impedance state during power up and power down. The outputs remain in the high-impedance state while the device is powered down.

When V_CC  of  'ABT863 is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V_CC, OE should be tied to V  through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.