Features: • State-of-the-Art BiCMOS Design Significantly Reduces ICCZ• ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)• Output Ports Have Equivalent 33- Series Resistors, So No External Resistors Are Required̶...
SN74BCT2410: Features: • State-of-the-Art BiCMOS Design Significantly Reduces ICCZ• ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)&...
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• State-of-the-Art BiCMOS Design Significantly Reduces ICCZ
• ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
• Output Ports Have Equivalent 33- Series Resistors, So No External Resistors Are Required
• Packaged in Plastic Small-Outline (DW) Package

The SN74BCT2410 is a noninverting 11-bit buffer/line driver specifically designed to drive MOS DRAMs of up to 4 megabits. It is also suitable for use with wide data paths or buses carrying parity. The outputs, which are designed to source 1 mA and sink 12 mA, include 33- series resistors to reduce overshoot and undershoot.
The output-enable (OE1 and OE2) inputs of the SN74BCT2410 are routed internally to a two-input AND gate with active-low inputs. When both OE1 and OE2 are low, the Y outputs are active (high or low logic level). When either OE1 or OE2 is high, the Y outputs are in the high-impedance state.
The multiple ground pins of the SN74BCT2410 reduce switching noise for more reliable system operation.
The SN74BCT2410 is characterized for operation from 0°C to 70°C.