Features: • State-of-the-Art BiCMOS Design Significantly Reduces ICCZ• ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015• Output Ports Have Equivalent 33- Series Resistors, So No External Resistors Are Required• 3-State Inverting Outputs Drive Bus Lines or Buffer ...
SN74BCT2828B: Features: • State-of-the-Art BiCMOS Design Significantly Reduces ICCZ• ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015• Output Ports Have Equivalent 33- Series Resistor...
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• State-of-the-Art BiCMOS Design Significantly Reduces ICCZ
• ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015
• Output Ports Have Equivalent 33- Series Resistors, So No External Resistors Are Required
• 3-State Inverting Outputs Drive Bus Lines or Buffer Memory Address Registers
• Flow-Through Architecture Optimizes PCB Layout
• Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks, and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)

These SN74BCT2828B 10-bit bus/MOS memory drivers provide a high-performance bus interface for wide data paths or buses carrying parity.
The SN74BCT2828B 3-state control gate is a 2-input AND gate with active-low inputs so that if either output-enable (OE1 or OE2) input is high, all ten outputs are in the high-impedance state. The outputs are also in the high-impedance state during power-up and power-down conditions. The outputs remain in the high-impedance state while the device is powered down.
The SN74BCT2828B outputs, which are designed to source or sink up to 12 mA, include 33- series resistors to reduce overshoot and undershoot.
The SN54BCT2828A is characterized for operation over the full military temperature range of 55°C to 125°C. The SN74BCT2828B is characterized for operation from 0°C to 70°C.