Features: • State-of-the-Art BiCMOS Design Significantly Reduces ICCZ• ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)• 3-State Inverting Outputs Drive Bus Lines or Buffer Memory Address Registers• P-N-P Inp...
SN74BCT29828B: Features: • State-of-the-Art BiCMOS Design Significantly Reduces ICCZ• ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)&...
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• State-of-the-Art BiCMOS Design Significantly Reduces ICCZ
• ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
• 3-State Inverting Outputs Drive Bus Lines or Buffer Memory Address Registers
• P-N-P Inputs Reduce dc Loading
• Flow-Through Architecture Optimizes PCB Layout
• Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)

These SN74BCT29828B 10-bit buffers and bus drivers provide high-performance bus interface for wide data paths or buses carrying parity.
The SN74BCT29828B 3-state control gate is a 2-input AND gate with active-low inputs so that if either output-enable (OE1 or OE2) input is high, all ten outputs are in the high-impedance state. The outputs are also in the high-impedance state during power-up and power-down conditions. The outputs remain in the high-impedance state while the device is powered down.
The SN54BCT29828B is characterized for operation over the full military temperature range of 55°C to 125°C. The SN74BCT29828B is characterized for operation from 0°C to 70°C.