SN74CB3Q3257

Specifications

Supply voltage range, VCC (see Note 1)			−0.5 V to 7 V
Control input voltage range, VIN (see Notes 1 and 2)			−0.5 V to 7 V
Switch I/O voltage range, VI/O (see Notes 1, 2, and 3)			−0.5 V to 7 V
Control input clamp current, IIK (VIN < 0)			−50 mA
I/O port clamp current, II/OK (VI/O < 0)			−50 mA
ON-state switch current, II/O (see Note 4)			±64 mA
Continuous current through VCC or GND terminals			±100 mA
Package thermalimpedance, JA	(see Note 5)	D package	73°C/W
	(see Note 5)	DB package	82°C/W
	(see Note 5)	DBQ package	90°C/W
	(see Note 5)	DGV package	120°C/W
	(see Note 5)	PW package	108°C/W
	(see Note 6)	RGY package	39°C/W
Storage temperature range, Tstg			−65°C to 150°C

Description

The SN74CB3Q3257 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (r_on). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3257 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

This SN74CB3Q3257 is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered-down. The device has isolation during power off. To ensure the high-impedance state during power up or power down, OE should be tied to V_CC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.