SN74CBTLV16211C

Supply voltage range, V_CC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . −0.5 V to 4.6 V
Input voltage range, V_I (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 4.6 V
Continuous channel current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . . . . 128 mA
Input clamp current, I_IK (V_I < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50 mA
Package thermal impedance, _JA (see Note 2): GRD/ZRD package . . . . . . . . . . . . . . . . . . . . . . . . . . . 36/W
Storage temperature range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . −65 to 150
† Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
2. The package thermal impedance is calculated in accordance with JESD 51-7.

The SN74CBTLV16211C provides 24 bits of high-speed bus switching. The low on-state resistance of the switch allows connections to be made with minimal propagation delay.

The SN74CBTLV16211C device is organized as dual 12-bit bus switches with separate output-enable (OE) inputs. It can be used as two 12-bit bus switches or as one 24-bit bus switch. When OE is low, the associated 12-bit bus switch is on, and port A is connected to port B. When OE is high, the switch is open, and the high-impedance state exists
between the two ports.

This SN74CBTLV16211C device is fully specified for partial-power-down applications using I_off. The I_off feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the SN74CBTLV16211C high-impedance state during power up or power down,OE should be tied to V_CC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.