Features: EPIC E (Enhanced-Performance Implanted CMOS) Submicron ProcessTypical VOLP (Output Ground Bounce)< 0.8 V at VCC = 3.3 V, TA = 25°CTypical VOHV (Output VOH Undershoot)> 2 V at VCC = 3.3 V, TA = 25°CSupports Mixed-Mode Signal Operation on All Ports (5-V Input/Output Voltage With 3.3-...
SN74LVC828A: Features: EPIC E (Enhanced-Performance Implanted CMOS) Submicron ProcessTypical VOLP (Output Ground Bounce)< 0.8 V at VCC = 3.3 V, TA = 25°CTypical VOHV (Output VOH Undershoot)> 2 V at VCC = 3...
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EPIC E (Enhanced-Performance Implanted CMOS) Submicron Process
Typical VOLP (Output Ground Bounce)< 0.8 V at VCC = 3.3 V, TA = 25°C
Typical VOHV (Output VOH Undershoot)> 2 V at VCC = 3.3 V, TA = 25°C
Supports Mixed-Mode Signal Operation on All Ports (5-V Input/Output Voltage With 3.3-V VCC)
ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
Latch-Up Performance Exceeds 250 mA Per JESD 17
Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline (DB), and Thin Shrink Small-Outline (PW) Packages

This 10-bit buffer/bus driver SN74LVC828A is designed for 1.65-V to 3.6-V VCC operation.
The SN74LVC828A provides a high-performance bus interface for wide data paths or buses carrying parity.
The SN74LVC828A 3-state control gate is a 2-input AND gate with active-low inputs so that if either output-enable (OE1 or OE2) input is high, all ten outputs are in the high-impedance state. The SN74LVC828A provides inverting data at its outputs.
Inputs can be driven from either 3.3-V or 5-V devices. This feature allows the use of these devices as translators in a mixed 3.3-V/5-V system environment.
To ensure the high-impedance state during power up or power down, SN74LVC828A OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
The SN74LVC828A is characterized for operation from 40°C to 85°C.