SN75372

Features: • Dual Circuits Capable of Driving High-Capacitance Loads at High Speeds• Output Supply Voltage Range up to 24 V• Low Standby Power DissipationApplicationThe drive requirements of power MOSFETs are much lower than comparable bipolar power transistors. The input impedanc...

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SeekIC No. : 004499636 Detail

SN75372: Features: • Dual Circuits Capable of Driving High-Capacitance Loads at High Speeds• Output Supply Voltage Range up to 24 V• Low Standby Power DissipationApplicationThe drive requir...

floor Price/Ceiling Price

Part Number:
SN75372
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

• Dual Circuits Capable of Driving High-Capacitance Loads at High Speeds
• Output Supply Voltage Range up to 24 V
• Low Standby Power Dissipation



Application

The drive requirements of power MOSFETs are much lower than comparable bipolar power transistors. The input impedance of a FET consists of a reverse biased PN junction that can be described as a large capacitance in parallel with a very high resistance. For this reason, the commonly used open-collector driver with a pullup resistor is not satisfactory for high-speed applications. In Figure 12(a), an IRF151 power MOSFET switching an inductive load is driven by an open-collector transistor driver with a 470- pullup resistor. The input capacitance (Ciss) specification for an IRF151 is 4000 pF maximum. The resulting long turn-on time due to the  combination of Ciss and the pullup resistor is shown in Figure 12(b).




Specifications

Supply voltage range, VCC1 (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 V to 7 V
Supply voltage range, VCC2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 V to 25 V
Input voltage, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5 V
Peak output current, VO (tw < 10 ms, duty cycle < 50 . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
Continuous total power dissipation . . . . . . . . .. . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . .  . . . . . . . . . . . . . . 65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage
to the device. These are stress ratings only, and functional operation of the device at these or any
other conditions beyond those indicated under "recommended operating conditions" is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Voltage values are with respect to network GND.



Description

The SN75372 is a dual NAND gate interface circuit designed to drive power MOSFETs from TTL inputs. It provides high current and voltage levels necessary to drive large capacitive loads at high speeds. The device operates from a VCC1 of 5 V and a VCC2 of up to 24 V.

The SN75372 is characterized for operation from 0°C to 70°C.




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