Features: • Dual Circuits Capable of Driving High-Capacitance Loads at High Speeds• Output Supply Voltage Range up to 24 V• Low Standby Power DissipationApplicationThe drive requirements of power MOSFETs are much lower than comparable bipolar power transistors. The input impedanc...
SN75372: Features: • Dual Circuits Capable of Driving High-Capacitance Loads at High Speeds• Output Supply Voltage Range up to 24 V• Low Standby Power DissipationApplicationThe drive requir...
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The drive requirements of power MOSFETs are much lower than comparable bipolar power transistors. The input impedance of a FET consists of a reverse biased PN junction that can be described as a large capacitance in parallel with a very high resistance. For this reason, the commonly used open-collector driver with a pullup resistor is not satisfactory for high-speed applications. In Figure 12(a), an IRF151 power MOSFET switching an inductive load is driven by an open-collector transistor driver with a 470- pullup resistor. The input capacitance (Ciss) specification for an IRF151 is 4000 pF maximum. The resulting long turn-on time due to the combination of Ciss and the pullup resistor is shown in Figure 12(b).
The SN75372 is a dual NAND gate interface circuit designed to drive power MOSFETs from TTL inputs. It provides high current and voltage levels necessary to drive large capacitive loads at high speeds. The device operates from a VCC1 of 5 V and a VCC2 of up to 24 V.
The SN75372 is characterized for operation from 0°C to 70°C.