SO2222AW

Transistors Bipolar (BJT) NPN General Purpose

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SeekIC No. : 00214912 Detail

SO2222AW: Transistors Bipolar (BJT) NPN General Purpose

floor Price/Ceiling Price

Part Number:
SO2222AW
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/1

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 40 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 0.6 A
DC Collector/Base Gain hfe Min : 100 Configuration : Single
Maximum Operating Frequency : 270 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-323-3
Packaging : Reel    

Description

Transistor Polarity : NPN
DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Collector- Emitter Voltage VCEO Max : 40 V
Maximum DC Collector Current : 0.6 A
Maximum Operating Frequency : 270 MHz
Package / Case : SOT-323-3


Features:

· SILICON EPITAXIAL PLANAR NPN TRANSISTOR
· MINIATURE SOT-323 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS
· TAPE & REEL PACKING
· THE PNP COMPLEMENTARY TYPE IS SO2907AW




Application

· WELL SUITABLE FOR PORTABLE EQUIPMENT
· SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE



Specifications

Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage (IE = 0)
75
V
VCEO
Collector-Emitter Voltage (IB = 0)
40
V
VEBO
Emitter-Base Voltage(IC = 0)
6
V
IC
Collector Current
0.6
A
ICM
Collector Peak Current (tp < 5 ms)
0.8
A
Ptot
Total Dissipation at Tamb = 25
200
mW
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150



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