SP202

Specifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 30 Watts 7.00 /W 200 -65 to 150 1.8A 70V 70V 20VDescriptionSilicon VDMOS and...

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SeekIC No. : 004500190 Detail

SP202: Specifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSo...

floor Price/Ceiling Price

Part Number:
SP202
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/30

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Product Details

Description



Specifications

Total
Device
Dissipation
Junction to Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
30 Watts 7.00 /W 200 -65 to 150 1.8A 70V 70V 20V





Description

Silicon VDMOS and LDMOStransistors SP202 designed specifically for broadband RF applications.Suitable for Militry Radios,Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,Laser Driver and others.

"Polyfet"TMprocess features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.






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