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SP8K31TB1

MOSFET 2N-CH 60V 3.5A 8SOIC

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SeekIC No. : 003429962 Detail

SP8K31TB1: MOSFET 2N-CH 60V 3.5A 8SOIC

SP8K31TB1 Data Sheet

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Part Number:
SP8K31TB1
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~2500
  • Unit Price
  • $.3
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Rohm Semiconductor
FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate
Drain Source Voltage VDS : + / - 20 V Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25° C: 3.5A Rds On (Max) @ Id, Vgs: 120 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) @ Vgs: 5.2nC @ 5V
Input Capacitance (Ciss) @ Vds: 250pF @ 10V Power - Max: 2W
Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOICN    

Description

FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Series: -
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOICN
Input Capacitance (Ciss) @ Vds: 250pF @ 10V
Current - Continuous Drain (Id) @ 25° C: 3.5A
Manufacturer: Rohm Semiconductor
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 120 mOhm @ 3.5A, 10V
Gate Charge (Qg) @ Vgs: 5.2nC @ 5V


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