SP8M10TB

MOSFET N+P 30V 7A/4.5A 8-SOIC

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SeekIC No. : 003430082 Detail

SP8M10TB: MOSFET N+P 30V 7A/4.5A 8-SOIC

floor Price/Ceiling Price

US $ .29~.29 / Piece | Get Latest Price
Part Number:
SP8M10TB
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~2500
  • Unit Price
  • $.29
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Series: - Manufacturer: Rohm Semiconductor
FET Type: N and P-Channel FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25° C: 7A, 4.5A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) @ Vgs: 8.4nC @ 5V Power Dissipation : 120 mW
Input Capacitance (Ciss) @ Vds: 600pF @ 10V Power - Max: 2W
Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOICN    

Description

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)Alternate Packaging
Series: -
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOICN
Manufacturer: Rohm Semiconductor
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Input Capacitance (Ciss) @ Vds: 600pF @ 10V
Current - Continuous Drain (Id) @ 25° C: 7A, 4.5A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V
Gate Charge (Qg) @ Vgs: 8.4nC @ 5V


Parameters:

Technical/Catalog InformationSP8M10TB
VendorRohm Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C7A, 4.5A
Rds On (Max) @ Id, Vgs25 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 600pF @ 10V
Power - Max2W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs8.4nC @ 5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SP8M10TB
SP8M10TB
SP8M10TBTR ND
SP8M10TBTRND
SP8M10TBTR



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