SPA-1218

Series: -
P1dB: 29dBm (794.3mW)
Manufacturer: RFMD
Packaging: Tape & Reel (TR)
Voltage - Supply: 4.75 V ~ 5.25 V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
RF Type: PCS
Gain: 11.5dB ~ 13.5dB
Noise Figure: 7dB
Current - Supply: 275mA ~ 330mA
Frequency: 1.93GHz ~ 1.99GHz
Test Frequency: 1.93GHz ~ 1.99GHz


Features:

• On-chip Active Bias Control
• Patented High Reliability GaAsHBT Technology
• High Linearity Performance: +48dBm OIP3 Typ.
• Surface-Mountable Plastic Package


Application

• PCS Systems
• Multi-Carrier Applications


Specifications

Operation of this device above any one of these parameters may cause permanent damage.

Bias Conditions should also satisfy the following expression: I_DV_D (max) < (T_J - T_OP)/R_th,j-l

Parameter	Value	Unit
Supply Current (ID)	750	mA
Device Voltage (VD)	6.0	V
Power Dissipation	4.0	W
Operating Temperature (TOP)	-40 to +150	ºC
RF Input Power	+500	mW
Storage Temperature Range	-40 to +150	ºC
Operating Junction Temperature (TJ)	+150	ºC

Description

Stanford Microdevices' SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.

This SPA-1218 is specifically designed for use as a driver amplifier for infrastructure equipment in the 1950 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications.