SPA-2118

IC AMP HBT GAAS 850MHZ 8-SOIC

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SPA-2118 Picture
SeekIC No. : 004121333 Detail

SPA-2118: IC AMP HBT GAAS 850MHZ 8-SOIC

floor Price/Ceiling Price

Part Number:
SPA-2118
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Series: - Processor Series : Stellaris 1000
Manufacturer: RFMD Frequency: 810MHz ~ 960MHz
P1dB: 29dBm (794.3mW) Gain: 31.5dB ~ 34.5dB
Noise Figure: 5dB RF Type: ISM, IS-95, CDMA, AMPS
Voltage - Supply: 4.75 V ~ 5.25 V Current - Supply: 360mA ~ 425mA
Test Frequency: 810MHz ~ 960MHz Package / Case: 8-SOIC (0.154", 3.90mm Width)    

Description

Series: -
P1dB: 29dBm (794.3mW)
Manufacturer: RFMD
Packaging: Tape & Reel (TR)
Noise Figure: 5dB
Voltage - Supply: 4.75 V ~ 5.25 V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Current - Supply: 360mA ~ 425mA
Frequency: 810MHz ~ 960MHz
Gain: 31.5dB ~ 34.5dB
RF Type: ISM, IS-95, CDMA, AMPS
Test Frequency: 810MHz ~ 960MHz


Description

The SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.

Features of the SPA-2118 are:(1)high linearity performance:+20.7 dBm  IS-95 CDMA channel power at -55 dBc ACP,+47 dBm typ. OIP3; (2)on-chip active bias control; (3)high gain:  33 dB typ.; (4)patented high reliability GaAsHBT technology; (5)surface-mountable plastic package.This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850 MHz band.Its high linearity makes it an ideal choice for multi-carrier and digital applications.

The absolute maximum ratings of the SPA-2118 can be summarized as:(1)Max. device  voltage:6 V;(2)supply current:150mA;(3)junction temperature range:160;(4)storage temperature:150;(5)max. RF input power:10 dB.Bias should be supplied to this pin through an external RF choke. Because DC biasing is present onthis pin, a DC blocking capacitor should be used inmost applications (see applicationschematic). The supply side of the bias network should be well bypassed. Anoutput matching network is necessary for optimum performance.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.




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