IC AMP HBT GAAS 2200MHZ 8-SOIC
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| Series: | - | Manufacturer: | RFMD | ||
| Processor Series : | Stellaris 1000 | Frequency: | 1.7GHz ~ 2.2GHz | ||
| P1dB: | 29.5dBm (891.3mW) | Gain: | 22.5dB ~ 25dB | ||
| Noise Figure: | 5.5dB | RF Type: | W-CDMA, PCS | ||
| Voltage - Supply: | 4.75 V ~ 5.25 V | Current - Supply: | 360mA ~ 425mA | ||
| Test Frequency: | 1.7GHz ~ 2.2GHz | Package / Case: | 8-SOIC (0.154", 3.90mm Width) |

The SPA-2318 is designed as one kind of high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier device that is housed in a low-cost surface-mountable plastic package. This device can be use as a driver amplifier for infrastructure equipment in the 2150 MHz PCS band, and the high linearity makes it an ideal choice for multi-carrier and digital applications such as W-CDMA Systems and Multi-Carrier Applications.
Features of the SPA-2318 are:(1)High Linearity Performance: +47 dBm Typ. OIP3 at 2140 MHz, +21.7 dBm W-CDMA Channel Power at -45 dBc ACP; (2)On-chip Active Bias Control; (3)High Gain: 23 dB Typ.; (4)Patented High Reliability GaAsHBT Technology; (5)Surface-Mountable Plastic Package.
The absolute maximum ratings of the SPA-2318 can be summarized as:(1)Frequency of Operation: 2110 to 2170;(2)Output Power at 1 dB Compression: 28 dBm;(3)Small Signal Gain: 23 dB;(4)Input VSWR: 1.5 : 1;(5)Output Third Order Intercept Point Power out per tone = +14 dBm: 47 dBm;(6)Noise Figure: 5.0 dB;(7)Device Current: 400 mA;(8)Thermal Resistance (junction - lead): 32 ºC/W. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com.