Features: • Available in Lead Free, RoHS compliant, & Green packaging• Efficient Class AB operation• P1dB = 30 dBm @ 1960MHz• High Linearity/ACP performance• MSL 1 moisture rating• Power shutdown using VPC (less than 5uA IDQ)Application• W-CDMA, PCS, C...
SPB-3018Z: Features: • Available in Lead Free, RoHS compliant, & Green packaging• Efficient Class AB operation• P1dB = 30 dBm @ 1960MHz• High Linearity/ACP performance• MSL 1 ...
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| Parameter | Absolute Limit |
| Max Device Current (IDQ) | 400 mA |
| Max Device Voltage (VD) | 6 V |
| Max. RF Input Power | +26 dBm |
| Max. Operating Dissipated Power (quiescent) |
2.0 W |
| Max. Junction Temp. (TJ) | +150°C |
| Operating Temp. Range (TL) | -40°C to +85°C |
| Max. Storage Temp. | +150°C |
| Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l TL=TLEAD | |
The SPB-3018 is high-efficiency InGaP/GaAs Heterojuction Bipolar Transistor (HBT) amplifier RFIC. This amplifier incorporates an on-chip Class AB bias circuit which provides excellent efficiency while maintaining good linearity. The on-chip bias also allows the device output power (and current) to drive up towards saturation as the input power increases. The SPB-3018 is an ideal choice for multi-carrier as well as digital wireless telecom or general wireless applications in the 400-2500 MHz range.