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SPB07N60S5

MOSFET COOL MOS N-CH 600V 7.3A

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SeekIC No. : 00162577 Detail

SPB07N60S5: MOSFET COOL MOS N-CH 600V 7.3A

SPB07N60S5 Data Sheet

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Part Number:
SPB07N60S5
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 7.3 A
Resistance Drain-Source RDS (on) : 0.6 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 7.3 A
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 0.6 Ohms


Features:

• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance




Specifications

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 7.3
4.6		 A
Pulsed drain current, tp limited by Tjmax ID puls 14.6
Avalanche energy, single pulse
ID=-A, VDD=50V		 EAS 230 mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=7.3A, VDD=50V		 EAR 0.5
Avalanche current, repetitive tAR limited by Tjmax IAR 7.3 A
Gate source voltage VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, TC = 25°C Ptot 83 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 480 V, ID = 7.3 A, Tj = 125 °C		 dv/dt 20 V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.




Parameters:

Technical/Catalog InformationSPB07N60S5
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C7.3A
Rds On (Max) @ Id, Vgs600 mOhm @ 4.6A, 10V
Input Capacitance (Ciss) @ Vds 970pF @ 25V
Power - Max83W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs35nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPB07N60S5
SPB07N60S5
SPB07N60S5INDKR ND
SPB07N60S5INDKRND
SPB07N60S5INDKR



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