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SPB11N60C3

MOSFET COOL MOS N-CH 650V 11A

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SeekIC No. : 00148890 Detail

SPB11N60C3: MOSFET COOL MOS N-CH 650V 11A

SPB11N60C3 Data Sheet

floor Price/Ceiling Price

US $ 1.11~1.69 / Piece | Get Latest Price
Part Number:
SPB11N60C3
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.69
  • $1.36
  • $1.23
  • $1.11
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.38 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-263
Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.38 Ohms


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)


Specifications

Parameter Symbol Value Unit
SPP_B SPA
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 11
7		 111)
71)		 A
Pulsed drain current, tp limited by Tjmax ID puls 33 33 A
Avalanche energy, single pulse
ID=5.5A, VDD=50V		 EAS 340 340 mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11A, VDD=50V		 EAR 0.6 0.6
Avalanche current, repetitive tAR limited by Tjmax IAR 11 11 A
Gate source voltage static VGS ±20 ±20 V
Gate source voltage AC (f >1Hz) VGS ±30 ±30  
Power dissipation, TC = 25°C Ptot 125 33 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C		 dv/dt 50 V/ns
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Description

 


Parameters:

Technical/Catalog InformationSPB11N60C3
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs380 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 1200pF @ 25V
Power - Max125W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs60nC @ 10V
Package / CaseD&sup2;Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPB11N60C3
SPB11N60C3
SPB11N60C3INDKR ND
SPB11N60C3INDKRND
SPB11N60C3INDKR



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