SPB12N50C3

MOSFET COOL MOS N-CH 560V 11.6A

product image

SPB12N50C3 Picture
SeekIC No. : 00147368 Detail

SPB12N50C3: MOSFET COOL MOS N-CH 560V 11.6A

floor Price/Ceiling Price

US $ .98~1.62 / Piece | Get Latest Price
Part Number:
SPB12N50C3
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.62
  • $1.3
  • $1.17
  • $.98
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/8

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 11.6 A
Resistance Drain-Source RDS (on) : 0.38 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 0.38 Ohms
Continuous Drain Current : 11.6 A


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)



Specifications

Parameter Symbol Value Unit
SPP_B_I SPA
Continuous drain current
TC = 25 °C
TC = 100 °C
ID 11.6
7
11.61)
71)
A
Pulsed drain current, tp limited by Tjmax ID puls 34.8 34.8 A
Avalanche energy, single pulse
ID=2.5A, VDD=50V
EAS 340 340 mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11.6A, VDD=50V
EAR 0.6 0.6
Avalanche current, repetitive tAR limited by Tjmax IAR 11.6 11.6 A
Gate source voltage VGS ±20 ±20 V
Gate source voltage AC (f >1Hz) VGS ±30 ±30
Power dissipation, TC = 25°C Ptot 125 33 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 400 V, ID = 11.6 A, Tj = 125 °C
dv/dt 50 V/ns

2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.


Parameters:

Technical/Catalog InformationSPB12N50C3
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)560V
Current - Continuous Drain (Id) @ 25° C11.6A
Rds On (Max) @ Id, Vgs380 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 1200pF @ 25V
Power - Max125W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs49nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPB12N50C3
SPB12N50C3
SPB12N50C3INDKR ND
SPB12N50C3INDKRND
SPB12N50C3INDKR



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Semiconductor Modules
Isolators
Programmers, Development Systems
LED Products
Cable Assemblies
View more