SPB160N04S2L-03

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 40 V
Package / Case : TO-263
Continuous Drain Current : 160 A
Resistance Drain-Source RDS (on) : 0.0027 Ohms
Configuration : Single Quad Source


Features:

· N-Channel
· Enhancement mode
· Logic Level
· High Current Rating
· Low On-Resistance R_DS(on)
· 175°C operating temperature
· Avalanche rated
· dv/dt rated


Specifications

Parameter	Symbol	Value	Unit
Continuous drain current1) TC = 25 °C	ID	160 160	A
Pulsed drain current TC = 25 °C	ID puls	640
Avalanche energy, single pulse ID =80A, VDD = 25 V, RGS = 25	EAS	810	mJ
Repetitive avalanche energy, limited by Tjmax 2)	EAR	30
Reverse diode dv/dt IS =160 A, VDS =32, di/dt = 200 A/s, Tjmax = 175 °C	dv/dt	6	kV/s
Gate source voltage	VGS	±20	V
Power dissipation TC = 25 °C	Ptot	300	W
Operating and storage temperature	Tj , Tstg	-55... +175	°C
IEC climatic category; DIN IEC 68-1		55/175/56

¹ Current limited by bondwire ; with an R_thJC = 0.5K/W the chip is able to carry I_D= 243A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
² Defined by design. Not subject to production test

Parameters:

Technical/Catalog Information	SPB160N04S2L-03
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	160A
Rds On (Max) @ Id, Vgs	2.7 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds	8000pF @ 25V
Power - Max	300W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	230nC @ 10V
Package / Case	D²Pak, TO-263 (7 leads + tab)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	SPB160N04S2L 03 SPB160N04S2L03