SPB18P06P

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: 28nC @ 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) @ Vds: 860pF @ 25V
Vgs(th) (Max) @ Id: 4V @ 1mA
Series: SIPMOS®
Manufacturer: Infineon Technologies
Supplier Device Package: PG-TO263-3
Current - Continuous Drain (Id) @ 25° C: 18.7A
Rds On (Max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V
Power - Max: 81.1W


Features:

· P-Channel
· Enhancement mode
· Avalanche rated
· dv/dt rated
· 175°C operating temperature


Specifications

Parameter	Symbol	Value	Unit
Continuous drain current TC = 25 °C TC = 100 °C	ID	-18.6 -13.2	A
Pulsed drain current TC = 25 °C	ID puls	-74.4
Avalanche energy, single pulse ID =-18.6A, VDD = -25 V, RGS = 25	EAS	150	mJ
Avalanche energy, periodic limited by Tjmax	EAR	8
Reverse diode dv/dt IS = -18.6 A, VDS = -48 V, di/dt = 200 A/s, Tjmax = 175 °C	dv/dt	6	kV/s
Gate source voltage	VGS	±20	V
Power dissipation TC = 25 °C	Ptot	80	W
Operating and storage temperature	Tj , Tstg	-55... +175	°C
IEC climatic category; DIN IEC 68-1		55/175/56

Parameters:

Technical/Catalog Information	SPB18P06P
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	18.7A
Rds On (Max) @ Id, Vgs	130 mOhm @ 13.2A, 10V
Input Capacitance (Ciss) @ Vds	860pF @ 25V
Power - Max	81.1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	28nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	SPB18P06P SPB18P06P