SPB35N10

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25° C: 35A
Gate Charge (Qg) @ Vgs: 65nC @ 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power - Max: 150W
Input Capacitance (Ciss) @ Vds: 1570pF @ 25V
Series: SIPMOS®
Manufacturer: Infineon Technologies
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: P-TO263-3
Rds On (Max) @ Id, Vgs: 44 mOhm @ 26.4A, 10V


Features:

· N-Channel
· Enhancement mode
·175°C operating temperature
· Avalanche rated
· dv/dt rated


Specifications

Parameter	Symbol	Value	Unit
Continuous drain current TC = 25 °C TC = 100 °C	ID	35 26.4	A
Pulsed drain current TC = 25 °C	ID puls	140
Avalanche energy, single pulse ID =35 A, VDD = 25 V, RGS = 25	EAS	245	mJ
Reverse diode dv/dt IS =35 A, VDS = 80 V, di/dt = 200 A/s, Tjmax = 175 °C	dv/dt	6	kV/s
Gate source voltage	VGS	±20	V
Power dissipation TC = 25 °C	Ptot	150	W
Operating and storage temperature	Tj , Tstg	-55... +175	°C
IEC climatic category; DIN IEC 68-1		55/175/56

Parameters:

Technical/Catalog Information	SPB35N10
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	35A
Rds On (Max) @ Id, Vgs	44 mOhm @ 26.4A, 10V
Input Capacitance (Ciss) @ Vds	1570pF @ 25V
Power - Max	150W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	65nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	SPB35N10 SPB35N10 SPB35N10INTR ND SPB35N10INTRND SPB35N10INTR