SPB77N06S2-12

MOSFET N-CH 55V 80A D2PAK

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SeekIC No. : 003433154 Detail

SPB77N06S2-12: MOSFET N-CH 55V 80A D2PAK

floor Price/Ceiling Price

Part Number:
SPB77N06S2-12
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/5

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Product Details

Quick Details

Series: OptiMOS™ Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Standard
Continuous Drain Current : 15 A Drain to Source Voltage (Vdss): 55V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 80A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 12 mOhm @ 38A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 93µA Gate Charge (Qg) @ Vgs: 60nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2350pF @ 25V
Power - Max: 158W Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: P-TO263-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) @ Vgs: 60nC @ 10V
Drain to Source Voltage (Vdss): 55V
Power - Max: 158W
Current - Continuous Drain (Id) @ 25° C: 80A
Manufacturer: Infineon Technologies
Series: OptiMOS™
Input Capacitance (Ciss) @ Vds: 2350pF @ 25V
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: P-TO263-3
Rds On (Max) @ Id, Vgs: 12 mOhm @ 38A, 10V


Features:

· N-Channel
· Enhancement mode
· 175°C operating temperature
· Avalanche rated
· dv/dt rated



Specifications

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
ID 80
56
A
Pulsed drain current
TC = 25 °C
ID puls 320
Avalanche energy, single pulse
ID =-77A, VDD = 25 V, RGS = 25
EAS 280 mJ
Repetitive avalanche energy, limited by Tjmax1) EAR 16
Reverse diode dv/dt
IS = 77 A, VDS = 44 , di/dt = 200 A/s,
Tjmax = 175 °C
dv/dt 6 kV/s
Gate source voltage VGS ±20 V
Power dissipation
TC = 25 °C
Ptot 158 W
Operating and storage temperature Tj , Tstg -55... +175 °C
IEC climatic category; DIN IEC 68-1   55/175/56  

1Defined by design. Not subject to production test.




Parameters:

Technical/Catalog InformationSPB77N06S2-12
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs12 mOhm @ 38A, 10V
Input Capacitance (Ciss) @ Vds 2350pF @ 25V
Power - Max158W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs60nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names SPB77N06S2 12
SPB77N06S212



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