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MFG:infineon  Package Cooled:P-TO263-3-2  D/C:09+  

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Part Number: SPB80N03S2-03

 

MFG: infineon

Package Cooled: P-TO263-3-2

D/C: 09+

 

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SPB80N03S2-03 Maximum Ratings

Parameter Symbol Value Unit
Continuous drain current 1)
TC = 25 °C
 ID 80
80		 A
Pulsed drain current
TC = 25 °C		 ID puls 320
Avalanche energy, single pulse
ID =-80A, VDD = 25 V, RGS = 25		 EAS 810 mJ
Repetitive avalanche energy, limited by Tjmax2) EAR 30
Reverse diode dv/dt
IS = 80 A, VDS = 24 , di/dt = 200 A/s,
Tjmax = 175 °C
 dv/dt 6 kV/s
Gate source voltage VGS ±20 V
Power dissipation
TC = 25 °C		 Ptot 300 W
Operating and storage temperature Tj , Tstg -55... +175 °C
IEC climatic category; DIN IEC 68-1   55/175/56  

1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 307A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test

SPB80N03S2-03 Features

· N-Channel
· Enhancement mode
· Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated

SPB80N03S2-03 datasheet

SPB80N03S2-03
PDF/DataSheet Download

  • Datasheet: SPB80N03S2-03
  • File Size: 428479 KB
  • Manufacturer: INFINEON [Infineon Technologies AG]
  • Click here to Download

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