MOSFET N-CH 12 V 30 mA
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 10.5 A | ||
Resistance Drain-Source RDS (on) : | 170 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252 | Packaging : | Reel |
· N-Channel
· Enhancement mode
·175°C operating temperature
· Avalanche rated
· dv/dt rated
Parameter | Symbol | Value | Unit |
Continuous drain current1) TC = 25 °C TC=100°C |
ID | 10.5 7.8 |
A |
Pulsed drain current TC = 25 °C |
ID puls | 41.2 | |
Avalanche energy, single pulse ID =10.5A, VDD = 25 V, RGS = 25 |
EAS | 60 | mJ |
Reverse diode dv/dt IS =10.5 A, VDS =80 , di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
Gate source voltage | VGS | ±20 | V |
Power dissipation TC = 25 °C |
Ptot | 50 | W |
Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
IEC climatic category; DIN IEC 68-1 | 55/175/56 |
Technical/Catalog Information | SPD11N10 |
Vendor | Infineon Technologies (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 10.5A |
Rds On (Max) @ Id, Vgs | 170 mOhm @ 7.8A, 10V |
Input Capacitance (Ciss) @ Vds | 400pF @ 25V |
Power - Max | 50W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 18.3nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SPD11N10 SPD11N10 SPD11N10INCT ND SPD11N10INCTND SPD11N10INCT |