SPD14N06S2-80

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Gate Charge (Qg) @ Vgs: 10nC @ 10V
FET Feature: Standard
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) @ Vds: 400pF @ 25V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25° C: 17A
Power - Max: 30W
Drain to Source Voltage (Vdss): 55V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: P-TO252-3
Rds On (Max) @ Id, Vgs: 80 mOhm @ 7A, 10V


Features:

· N-Channel
· Enhancement mode
· 175°C operating temperature
· Avalanche rated
· dv/dt rated

Specifications

Parameter	Symbol	Value	Unit
Continuous drain current TC = 25 °C	ID	19 13	A
Pulsed drain current TC = 25 °C	ID puls	76
Avalanche energy, single pulse ID =15A, VDD = 25 V, RGS = 25	EAS	43	mJ
Repetitive avalanche energy, limited by Tjmax 1)	EAR	4.7
Reverse diode dv/dt IS =15 A, VDS =44V, di/dt = 200 A/s, Tjmax = 175 °C	dv/dt	6	kV/s
Gate source voltage	VGS	±20	V
Power dissipation TC = 25 °C	Ptot	47	W
Operating and storage temperature	Tj , Tstg	-55... +175	°C
IEC climatic category; DIN IEC 68-1		55/175/56

1 Defined by design. Not subject to production test.


Parameters:

Technical/Catalog Information	SPD14N06S2-80
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	17A
Rds On (Max) @ Id, Vgs	80 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds	400pF @ 25V
Power - Max	30W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	10nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	SPD14N06S2 80 SPD14N06S280