SPD18P06P

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) @ Vgs: 33nC @ 10V
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) @ Vds: 860pF @ 25V
Vgs(th) (Max) @ Id: 4V @ 1mA
Power - Max: 80W
Series: SIPMOS®
Manufacturer: Infineon Technologies
Rds On (Max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V
Supplier Device Package: P-TO252-3
Current - Continuous Drain (Id) @ 25° C: 18.6A


Features:

· P-Channel
· Enhancement mode
· Avalanche rated
· dv/dt rated
· 175°C operating temperature


Specifications

Parameter	Symbol	Value	Unit
Continuous drain current TC = 25 °C TC = 100 °C	ID	-18.6 -13.2	A
Pulsed drain current TC = 25 °C	ID puls	-74.4
Avalanche energy, single pulse ID =-18.6A, VDD = -25 V, RGS = 25	EAS	150	mJ
Repetitive avalanche energy, limited by Tjmax	EAR	8
Reverse diode dv/dt IS =-18.6 A, VDS =-48V, di/dt = 200 A/s,Tjmax=175°C	dv/dt	6	kV/s
Gate source voltage	VGS	±20	V
Power dissipation TC = 25 °C	Ptot	80	W
Operating and storage temperature	Tj , Tstg	-55... +175	°C
IEC climatic category; DIN IEC 68-1		55/175/56

Parameters:

Technical/Catalog Information	SPD18P06P
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	18.6A
Rds On (Max) @ Id, Vgs	130 mOhm @ 13.2A, 10V
Input Capacitance (Ciss) @ Vds	860pF @ 25V
Power - Max	80W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	33nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPD18P06P SPD18P06P SPD18P06PINDKR ND SPD18P06PINDKRND SPD18P06PINDKR