SPD22N08S2L-50

MOSFET N-CH 75V 25A DPAK

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SPD22N08S2L-50: MOSFET N-CH 75V 25A DPAK

floor Price/Ceiling Price

Part Number:
SPD22N08S2L-50
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Series: OptiMOS™ Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Continuous Drain Current : 15 A Drain to Source Voltage (Vdss): 75V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 25A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 50 mOhm @ 11A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 31µA Gate Charge (Qg) @ Vgs: 33nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 850pF @ 25V
Power - Max: 75W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: P-TO252-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) @ Vgs: 33nC @ 10V
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25° C: 25A
Input Capacitance (Ciss) @ Vds: 850pF @ 25V
Power - Max: 75W
Rds On (Max) @ Id, Vgs: 50 mOhm @ 11A, 10V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Supplier Device Package: P-TO252-3
Vgs(th) (Max) @ Id: 2V @ 31µA


Features:

· N-Channel
· Enhancement mode
· Logic Level
· 175°C operating temperature
· Avalanche rated
· dv/dt rated




Specifications

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
ID 25
18
A
Pulsed drain current
TC = 25 °C
ID puls 100
Avalanche energy, single pulse
ID =22A, VDD = 25 V, RGS = 25
EAS 94 mJ
Repetitive avalanche energy, limited by Tjmax 1) EAR 7.5
Reverse diode dv/dt
IS =22 A, VDS =60V, di/dt = 200 A/s,
Tjmax = 175 °C
dv/dt 6 kV/s
Gate source voltage VGS ±20 V
Power dissipation
TC = 25 °C
Ptot 75 W
Operating and storage temperature Tj , Tstg -55... +175 °C
IEC climatic category; DIN IEC 68-1   55/175/56  

1 Defined by design. Not subject to production test.



Parameters:

Technical/Catalog InformationSPD22N08S2L-50
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C25A
Rds On (Max) @ Id, Vgs50 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds 850pF @ 25V
Power - Max75W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs33nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names SPD22N08S2L 50
SPD22N08S2L50



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