SPD50N03S2-07

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 50 A
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 0.0073 Ohms


Features:

· N-Channel
· Enhancement mode
· Excellent Gate Charge x R_DS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated

Specifications

Parameter	Symbol	Value	Unit
Continuous drain current1) TC = 25 °C	ID	50 50	A
Pulsed drain current TC = 25 °C	ID puls	200
Avalanche energy, single pulse ID =50A, VDD = 25 V, RGS = 25	EAS	250	mJ
Repetitive avalanche energy, limited by Tjmax 2)	EAR	13
Reverse diode dv/dt IS =50 A, VDS =24V, di/dt = 200 A/s,Tjmax=175°C	dv/dt	6	kV/s
Gate source voltage	VGS	±20	V
Power dissipation TC = 25 °C	Ptot	136	W
Operating and storage temperature	Tj , Tstg	-55... +175	°C
IEC climatic category; DIN IEC 68-1		55/175/56

¹ Current limited by bondwire ; with an R_thJC = 1.1K/W the chip is able to carry I_D=106A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
² Defined by design. Not subject to production test

Parameters:

Technical/Catalog Information	SPD50N03S2-07
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	7.3 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds	2170pF @ 25V
Power - Max	136W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	46.5nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPD50N03S2 07 SPD50N03S207