SPF-2086TK

Series: -
Transistor Type: pHEMT FET
Noise Figure: 0.5dB
Packaging: Bulk
Power - Output: 20dBm
Voltage - Rated: 7V
Voltage - Test: 5V
Current - Test: 40mA
Frequency: 4GHz
Supplier Device Package: -
Gain: 18.7dB
Manufacturer: RFMD
Current Rating: 140mA
Package / Case: SOT-86


Features:

• 22 dB Gmax at 1.9 GHz
• 0.4 dB F_MIN at 1.9 GHz
• +32 dBm Output IP3
• +20 dBm Output Power at 1dB Compression


Application

• LNA for Analog and Digital Wireless Systems
• 3G, Cellular, PCS
• Fixed Wireless, Pager Systems
• Driver Stage for low power applications


Specifications

Parameter	Symbol	Value	Unit
DrainCurrent	IDS	I DSS	mA
Forward GateCurrent	IGSF	0.3	mA
Reverse Gate Current	IGSR	0.3	mA
Drain-to-SourceVoltage	VDS	+7	V
Gate-to-DrainVoltage	VGD	-8	V
Gate-to-SourceVoltage	VGS	<-5 or >0	V
RF Input Power	PN	100	mW
Operating Temperature	TOP	-40 to +85	°C
Storage Temperature Range	Tstor	-40 to +150	°C
Power Dissipation	PDISS	600	mW
Channel Temperature	TJ	+150	°C

Description

Sirenza Microdevices' SPF-2086TK is a high performance 0.25m pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300m device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device delivers excellent output TOI of 32 dBm.
SPF-2086TK provides ideal performance as driver stages in many commercial, industrial and military LNA applications.