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SPF-3043

Features: • DC-10 GHz Operation• Ultra Low NF: 0.25 dB @ 1 GHz 0.50 dB @ 2 GHz• High Assoc. Gain: 25 dB @ 1 GHz 22 dB @ 2 GHz• Low Current Draw for NFopt (3V,20mA)• +32 dBm OIP3, +20 dBm P1dB (5V,40mA)• Low Cost High Performance pHEMTApplication• LNA for W...

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SeekIC No. : 004501070 Detail

SPF-3043: Features: • DC-10 GHz Operation• Ultra Low NF: 0.25 dB @ 1 GHz 0.50 dB @ 2 GHz• High Assoc. Gain: 25 dB @ 1 GHz 22 dB @ 2 GHz• Low Current Draw for NFopt (3V,20mA)• +32...

SPF-3043 Data Sheet

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Part Number:
SPF-3043
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• DC-10 GHz Operation
• Ultra Low NF: 0.25 dB @ 1 GHz
                         0.50 dB @ 2 GHz
• High Assoc. Gain: 25 dB @ 1 GHz
                               22 dB @ 2 GHz
• Low Current Draw for NFopt (3V,20mA)
• +32 dBm OIP3, +20 dBm P1dB (5V,40mA)
• Low Cost High Performance pHEMT


Application

• LNA for Wireless Infrastructure
• Fixed Wireless Infrastructure
• Wireless Data
• Driver Stage for Low Power Applications


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Drain Current IDS 150 mA
Forward Gate Current IGS 2 mA
Drain-to-Source Voltage VDS 7 V
Gate-to-Source Voltage VGS -3 V
RF lnput Power PIN 15 dBm
Operating Temperature TOP -40 to+ 85
Storage Temperature Range Tstor -40 to +150
Power Disspation PDISS 430 mW
Operating Junction Temperature TJ +150



Description

Stanford Microdevices' SPF-3043 is a high performance 0.25µm pHEMT Gallium Arsenide FET. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device delivers excellent OIP3 of 32dBm. It provides ideal performance as a driver stage in many commercial and industrial LNA applications.




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