SPI70N10L

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 100V
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 250W
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge (Qg) @ Vgs: 240nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 70A
Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V
Series: SIPMOS®
Manufacturer: Infineon Technologies
Vgs(th) (Max) @ Id: 2V @ 2mA
Input Capacitance (Ciss) @ Vds: 4540pF @ 25V
Supplier Device Package: P-TO262-3


Features:

·N-Channel
· Enhancement mode
· Logic Level
·175°C operating temperature
· Avalanche rated
· dv/dt rated

Specifications

Parameter	Symbol	Value	Unit
Continuous drain current TC = 25 °C TC = 100 °C	ID	70 50	A
Pulsed drain current TC = 25 °C	ID puls	280
Avalanche energy, single pulse ID =70A, VDD = 25 V, RGS = 25	EAS	700	mJ
Avalanche energy, periodic limited by Tjmax	EAR	25
Reverse diode dv/dt IS = 70A, VDS = 0 V, di/dt = 200 A/s	dv/dt	6	kV/s
Gate source voltage	VGS	±20	V
Power dissipation TC = 25 °C	Ptot	250	W
Operating and storage temperature	Tj , Tstg	-55... +175	°C
IEC climatic category; DIN IEC 68-1		55/175/56

Parameters:

Technical/Catalog Information	SPI70N10L
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	70A
Rds On (Max) @ Id, Vgs	16 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds	4540pF @ 25V
Power - Max	250W
Packaging	Tube
Gate Charge (Qg) @ Vgs	240nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	SPI70N10L SPI70N10L