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SPI80N03S2-03

MOSFET N-KANAL POWER MOS

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SeekIC No. : 00161119 Detail

SPI80N03S2-03: MOSFET N-KANAL POWER MOS

SPI80N03S2-03 Data Sheet

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Part Number:
SPI80N03S2-03
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.0034 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.0034 Ohms
Package / Case : TO-262


Features:

· N-Channel
· Enhancement mode
· Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated


Specifications

Parameter Symbol Value Unit
Continuous drain current 1)
TC = 25 °C
 ID 80
80		 A
Pulsed drain current
TC = 25 °C		 ID puls 320
Avalanche energy, single pulse
ID =-80A, VDD = 25 V, RGS = 25		 EAS 810 mJ
Repetitive avalanche energy, limited by Tjmax2) EAR 30
Reverse diode dv/dt
IS = 80 A, VDS = 24 , di/dt = 200 A/s,
Tjmax = 175 °C
 dv/dt 6 kV/s
Gate source voltage VGS ±20 V
Power dissipation
TC = 25 °C		 Ptot 300 W
Operating and storage temperature Tj , Tstg -55... +175 °C
IEC climatic category; DIN IEC 68-1   55/175/56  

1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 307A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test




Parameters:

Technical/Catalog InformationSPI80N03S2-03
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs3.4 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 7020pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs150nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPI80N03S2 03
SPI80N03S203



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