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SPN01N50M2

Features: · New revolutionary high voltage technology· Ultra low gate charge· Extreme d v/d t rated· Optimized capacitances· Improved noise immunity· Former development designation: SPUx7N60S5/SPDx7N60S5Specifications Parameter Symbol Value Unit Continuous drain currentTC = 25 °CTC = ...

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SPN01N50M2: Features: · New revolutionary high voltage technology· Ultra low gate charge· Extreme d v/d t rated· Optimized capacitances· Improved noise immunity· Former development designation: SPUx7N60S5/SPDx7...

SPN01N50M2 Data Sheet

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SPN01N50M2
Supply Ability:
5000

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Upload time: 2024/4/27

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Product Details

Description



Features:

· New revolutionary high voltage technology
· Ultra low gate charge
· Extreme d v/d t rated
· Optimized capacitances
· Improved noise immunity
· Former development designation: SPUx7N60S5/SPDx7N60S5


Specifications

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 0.33
0.2		 A
Pulsed drain current, tp = 1ms 1)
TC = 25 °C		 ID puls 0.7
Reverse diode d v/d t
IS = 0.33 A, VDS< VDSS, di/dt = 100 A/µs,
Tjmax = 150 °C		 dv/d t 6 kV/µs
Gate source voltage VGS ±20 V
Power dissipation
TC = 25 °C		 Ptot 1.8 W
Operating and storage temperature Tj , Tstg -55... +150 °C



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