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SPN1026

Features: ·60V/0.50A , RDS(ON)= 4.0Ω@VGS=10V·60V/0.30A , RDS(ON)= 5.0Ω@VGS=5V·Super high density cell design for extremely low RDS (ON)·Exceptional on-resistance and maximum DC current capability·SOT-563 / SC-89-6L package designApplication·Drivers: Relays, Solenoids, Lamps, Hammers, D...

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SeekIC No. : 004501273 Detail

SPN1026: Features: ·60V/0.50A , RDS(ON)= 4.0Ω@VGS=10V·60V/0.30A , RDS(ON)= 5.0Ω@VGS=5V·Super high density cell design for extremely low RDS (ON)·Exceptional on-resistance and maximum DC current c...

SPN1026 Data Sheet

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Part Number:
SPN1026
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·60V/0.50A , RDS(ON)= 4.0Ω@VGS=10V
·60V/0.30A , RDS(ON)= 5.0Ω@VGS=5V
·Super high density cell design for extremely low RDS (ON)
·Exceptional on-resistance and maximum DC current capability
·SOT-563 / SC-89-6L package design


Application

·Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.
·High saturation current capability. Direct Logic-Level Interface: TTL/CMOS
·Battery Operated Systems
·Solid-State Relays


Pinout

Connection Diagram


Specifications

Parameter Symbol Typical Unit
Drain-Source Voltage VDSS 20 V
Gate Source Voltage VGSS ±12 V
Gate Source Voltage - Non Repetitive ( tp < 50s) VGSS ±40 V
Continuous Drain Current(TJ=150 ) TA=25 ID 0.32 A
Pulsed Drain Current IDM
 1.0 A
Continuous Source Current(Diode Conduction) IS 0.25 A
Power Dissipation TA=25 PD 0.30 W
Operating Junction Temperature
 TJ -55/150
Storage Temperature Range TSTG -55/150
Thermal Resistance-Junction to Ambient RJA 375 /W



Description

The SPN1026 is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 320mA DC and can deliver pulsed currents up to 1.0A. These products of the SPN1026 are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.




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