Features: `20V/4.0A,RDS(ON)=80mΩ@VGS=4.5V`20V/3.4A,RDS(ON)=90mΩ@VGS=2.5V`20V/2.8A,RDS(ON)=110mΩ@VGS=1.8V`20V/1.0A,RDS(ON)=140mΩ@VGS=1.25V`Super high density cell design for extremely low RDS (ON)`Exceptional on-resistance and maximum DC current capability`SOT-353 ( SC 70 )...
SPN1423A: Features: `20V/4.0A,RDS(ON)=80mΩ@VGS=4.5V`20V/3.4A,RDS(ON)=90mΩ@VGS=2.5V`20V/2.8A,RDS(ON)=110mΩ@VGS=1.8V`20V/1.0A,RDS(ON)=140mΩ@VGS=1.25V`Super high density cell design for e...
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| Parameter | Symbol | Typical | Unit | |
| Drain-Source Voltage | VDSS | 20 | V | |
| Gate Source Voltage | VGSS | ±12 | V | |
| Continuous Drain Current(TJ=150 ) | TA=25 | ID | 2.4 | A |
| TA=70 | 1.7 | |||
| Pulsed Drain Current | IDM |
6 | A | |
| Continuous Source Current(Diode Conduction) | IS | 1.6 | A | |
| Power Dissipation | TA=25 | PD | 0.95 | W |
| TA=70 | 0.51 | |||
| Operating Junction Temperature |
TJ | -55/150 | ||
| Storage Temperature Range | TSTG | -55/150 | ||
| Thermal Resistance-Junction to Ambient | RJA | 105 | /W | |
The SPN1423A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices of the SPN1423A are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.