Features: `30V/2.8A,RDS(ON)= 95mΩ@VGS=10V`30V/2.3A,RDS(ON)= 105mΩ@VGS=4.5V`30V/1.5A,RDS(ON)= 135mΩ@VGS=2.5V`Super high density cell design for extremely low RDS (ON)`Exceptional on-resistance and maximum DC current capability`SOT-353 ( SC70 ) package designApplication·Power Manag...
SPN1443A: Features: `30V/2.8A,RDS(ON)= 95mΩ@VGS=10V`30V/2.3A,RDS(ON)= 105mΩ@VGS=4.5V`30V/1.5A,RDS(ON)= 135mΩ@VGS=2.5V`Super high density cell design for extremely low RDS (ON)`Exceptional on...
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| Parameter | Symbol | Typical | Unit | |
| Drain-Source Voltage | VDSS | 30 | V | |
| Gate Source Voltage | VGSS | ±12 | V | |
| Continuous Drain Current(TJ=150 ) | TA=25 | ID | 2.3 | A |
| TA=70 | 1.8 | |||
| Pulsed Drain Current | IDM |
10 | A | |
| Continuous Source Current(Diode Conduction) | IS | 1.25 | A | |
| Power Dissipation | TA=25 | PD | 0.95 | W |
| TA=70 | 0.51 | |||
| Operating Junction Temperature |
TJ | 150 | ||
| Storage Temperature Range | TSTG | -55/150 | ||
| Thermal Resistance-Junction to Ambient | RJA | 100 | /W | |
The SPN1443A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices SPN1443A are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.